| Summary: | 碩士 === 國立臺灣大學 === 環境工程學研究所 === 96 === This study investigates the oxidation of local scrubber (L/S) wastewater from semiconductor manufacture by using ozonation, catalytic ozonation (O3/TiO2/Al2O3), and photo-catalytic ozonation (O3/UV/TiO2/Al2O3). This research result of advanced oxidation processes can be the references for the local scrubber wastewater reclaim system in semiconductor manufacture.
The experimental results shows that catalyst of Al2O3 or TiO2/Al2O3 can promote the TOC removal under the condition of neutral or alkaline buffer solution during ozonation of L/S wastewater, Al2O3 at alkaline buffer solution induce highest promotion in TOC removal. The treatment efficiency of O3/Al2O3 is more than ozone alone about 25.92 % TOC removal under alkaline buffer solution. However, TiO2/Al2O3 or Al2O3 cannot enhance the TOC removal under acidic condition (no adjust the pH value, the raw L/S wastewater is acidic solution) during ozonation. The catalyst of TiO2/Al2O3 also cannot provide the promotion in TOC removal for O3/UV process during oxidation of L/S wastewater. In addition, O3/UV in acidic solution and O3/Al2O3 in alkaline solution presents the higher TOC removal efficiency than others conditions during oxidized L/S wastewater. The TOC removal efficiency of above two processes in 30 minutes reaction time is 95.31% and 87.63%, respectively. In this context, O3/UV in acidic condition (without adjust the pH value of raw L/S wastewater) or O3/Al2O3 at alkaline solution will be the very viable approaches for application of advanced oxidation processes in the local scrubber wastewater reclaim system of semiconductor manufacture.
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