Study on Dressing Behaviors in Chemical Mechanical Polishing
碩士 === 國立臺灣大學 === 機械工程學研究所 === 96 === Chemical mechanical polishing (CMP) is the planarization technology most often used for semiconductor processes. The polishing pad needs to be dressed by a dresser to maintain the stability and the throughput of the planarization process. This study simulated an...
Main Authors: | Kuen-Ren Chen, 陳鯤仁 |
---|---|
Other Authors: | Hong-Tsu Young |
Format: | Others |
Language: | en_US |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/91421238731006956993 |
Similar Items
-
Research of Dressing Break-in Time of Polishing Pad for Cu-Chemical Mechanical Polishing Process
by: Yu-Ting Chen, et al.
Published: (2014) -
Research on Pad Dressing Process for Chemical Mechanical Polishing of Silicon Wafers
by: Cheng -Kuei Hsu, et al.
Published: (2001) -
AN EXPERIMENT INVESTIGATION ON THE EFFECTS OF CHEMICAL REACTION AND MECHANICAL POLISHING IN CHEMICAL-MECHANICAL POLISHING OF WAFERS WITH COPPER FILM
by: Ying-Jen Chu, et al.
Published: (2004) -
Study on tribology analysis of chemical mechanical polishing
by: Chin-cheng Chen, et al.
Published: (2007) -
A study on glass surface polishing by using the chemical mechanical polishing method
by: Hui-Mei Chen, et al.
Published: (2008)