Thin Film Germanium-on-Polyimide Optoelectronic Devices and Flexibility Analysis

• Main Authors: Yu-Hung Dai, 戴宇弘
• Other Authors: Chee Wee Liu
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/75890332050865838670

碩士 === 國立臺灣大學 === 電機工程學研究所 === 96 === In this thesis, we have demonstrated thin film Ge MOS devices on flexible substrate as polyimide using the technique of Smart-CutTM. Furthermore, we also analysis and study various properties of this type device. In order to realize the applications of thin film Ge MOS structure of flexible electronics, we have developed flexible photodetector, photovoltaic cell, and pMOSFETs. Moreover, new mechanic setup is constructed to apply external mechanical uniaxial tensile strain. The strain leads bandgap shrinkage. The red-shift of Raman spectroscopy can be used to extract strain. The relation between responsivity enhancements versus strain is discussed, and this phenomenon verifies the characteristic curve of optical absorption coefficient of Ge. Otherwise, we can be utilized the temperature variation to perform the GOP MOS detectors for sensing application. Finally, we utilize ANSYS to simulate GOP photodetector with mechanical uniaxial tensile strain. Furthermore, we also hope this process can be used on Silicon-on-Polyimide substrate to reduce the cost of GOP pMOSFETs that will be more conformed to current semiconductor industry.