The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires

The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires

碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The...

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Bibliographic Details
Main Authors:	Hung Ting-Hsiang, 洪挺翔
Other Authors:	Lee, Si-Chen
Format:	Others
Language:	en_US
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/27901963311872285375

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