The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires

碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The...

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Main Authors:	Hung Ting-Hsiang, 洪挺翔
Other Authors:	Lee, Si-Chen
Format:	Others
Language:	en_US
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/27901963311872285375

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spelling	ndltd-TW-096NTU054281142016-05-11T04:17:10Z http://ndltd.ncl.edu.tw/handle/27901963311872285375 The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires 矽奈米線二極體成長及特性之研究 Hung Ting-Hsiang 洪挺翔碩士國立臺灣大學電子工程學研究所 96 Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The growth mechanism and electrical characteristics of p-n junction SiNWs are demonstrated. The technique of sample preparation to eliminate the noise for I-V measurement is discussed. Repeated and optical I-V measurement of p-n SiNWs is also demonstrated in this thesis. Electrostatic force microscopy (EFM) is used to spatially define the position of junction in the p-n junction SiNW. Lee, Si-Chen 李嗣涔 2008 學位論文 ; thesis 79 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The growth mechanism and electrical characteristics of p-n junction SiNWs are demonstrated. The technique of sample preparation to eliminate the noise for I-V measurement is discussed. Repeated and optical I-V measurement of p-n SiNWs is also demonstrated in this thesis. Electrostatic force microscopy (EFM) is used to spatially define the position of junction in the p-n junction SiNW.
author2	Lee, Si-Chen
author_facet	Lee, Si-Chen Hung Ting-Hsiang 洪挺翔
author	Hung Ting-Hsiang 洪挺翔
spellingShingle	Hung Ting-Hsiang 洪挺翔 The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
author_sort	Hung Ting-Hsiang
title	The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
title_short	The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
title_full	The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
title_fullStr	The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
title_full_unstemmed	The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
title_sort	growth mechanism and electrical characteristics of p-n junction silicon nanowires
publishDate	2008
url	http://ndltd.ncl.edu.tw/handle/27901963311872285375
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The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires

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