The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27901963311872285375 |
| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The growth mechanism and electrical characteristics of p-n junction SiNWs are demonstrated. The technique of sample preparation to eliminate the noise for I-V measurement is discussed. Repeated and optical I-V measurement of p-n SiNWs is
also demonstrated in this thesis. Electrostatic force microscopy (EFM) is used to spatially define the position of junction in the p-n junction SiNW.
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