| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Oxide semiconductors for application in thin film transistors (TFTs) have drawn much attention in recent years. Oxide-based Semiconductors composed of heavy metal cations with spherical ns orbital to form conduction bands have various merits. First of all, high carrier transport properties (mobility) can be achieved in both crystalline and amorphous phase. Besides, the bandgap of oxide semiconductors is usually large and thus they are transparent in the visible range, which could be used to improves the aperture ratio of flat panel displays, or probably could be used for transparent electronics. Most oxide-semiconductor-based TFTs reported were fabricated by vacuum deposition techniques, such as pulsed laser deposition (PLD), RF magnetron sputtering deposition, and thermal evaporation, and thus are rather high cost. Solution-based oxide semiconductor deposition process is likely an alternative to achieve low-cost manufacturing and enable large-area deposition. Furthermore, solution processes also provide a convenient way to adjust the electrical, optical, and physical properties by simply modify compositions of precursors.
In this thesis, we deposited single and multi-components oxide semiconductor thin films by solution process. Metal chloride precursor solutions for fabricating oxide thin films were deposited on substrate by spin-coating method under ambient condition. The reactions of precursors were analyzed according to the thermogravimetric variation of precursors. Furthermore, the morphology of thin films was measured to verify the crystalline or amorphous characteristics of films. Also, the UV-Vis measurement indicates the transparency up to 90﹪for all these oxide thin films.
As for the oxide-based thin film transistors, functional thin film transistors based on solution-processed were effectively fabricated. The influences of film thickness, ratios of metal cations and annealing temperatures are investigated.
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