| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Smart-cut is a recently established advanced technology for fabricating high-quality silicon-on-insulator (SOI) systems and has been applied to many applications. Smart-cut process consists of direct wafer bonding and hydrogen-induced layer transfer technology.
In this thesis, the thin film silicon layer is transferred successfully to the glass by smart-cut process and formed the Silicon-on-Glass (SOG) structure. Because the glass substrate can reach the goal of low cost and can be used for back incident application, the glass substrate is a good substitute for silicon wafer capped with SiO2.
Since silicon absorbs light in the UV and visible light region, the SOG MOS photodetectors are studied in the thesis. 1.4-mm-thick Si detectors have responsivity at 532 nm, 635 nm and 850 nm exposure. To reduce the surface roughness of silicon layer, the second annealing in forming gas (i.e. H2 10%) is one of the workable methods.
Finally, we applied the plasma immersion ion implantation (PIII) technique for hydrogen implantation. Although the concentration of the implanted hydrogen in silicon by our PIII system is not enough for smart-cut process, PIII can be used for hydrogen passivation by implant hydrogen to passivate dangling bonds or defects in silicon. The PL intensity and responsivity of Si MOS detector are enhanced after the hydrogen implantation by PIII.
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