| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === In this thesis, an isolation technique for dual power amplifiers is introduced. For the isolation of dual power amplifiers, the equivalent coupling effect at 2.45GHz before laser cut is -24.7dB, after first laser cut is -27.2dB and after second laser cut is -29.25dB. The EVM at 3% criterion after first laser cut of standalone condition is 11.4dBm, of equal power is 8.9dBm and of 10dB larger input power from down-PA is 7.8dBm. After second laser cut the EVM at 3% criterion of standalone condition is 15dBm, of equal power is 13.9dBm and of 10dB larger input power from down-PA is 9.8dBm. The small signal gain, P1dB and PAE at P1dB are 18.6dB, 25.3dBm and 16.7%, respectively. By measuring electrical characteristics of commercial solar cells, the solar cell model can be established in ISE. Furthermore, the optimization simulations of doping profile, finger width and spacing and nano texture are performed.
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