Photoconductivity and Electronic Transport in Individual AlN Nanowires
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === Photoconductivity (PC) of individual AlN nanowires has been characterized using different below-gap excitation sources. Both positive (under 808 and 532 nm excitations) and negative (under 405 and 325 nm excitations) photocurrent responses are observed from the...
Main Authors: | Hsuan-Ming Huang, 黃宣銘 |
---|---|
Other Authors: | Ying-Jay Yang |
Format: | Others |
Language: | en_US |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/36775094491406318122 |
Similar Items
-
Photoconductivity and electronic transport in III-Nitrides nanowires
by: Hsin-Yi Chen, et al.
Published: (2010) -
Synthesis and Optical Properties of AlN nanowires
by: Ho, Wei-Lin, et al.
Published: (2011) -
Effects of Size and Surface Molecules on Photoconductivity of Individual GaN Nanowire
by: Fu-Chieh Chang, et al.
Published: (2008) -
Size-dependent photoconductivity and electroic transport in single GaN nanowire
by: Hsin-Yi Chen, et al.
Published: (2005) -
Electronic transport, photoconductivity and gas sensing properties in Au peapodded silica nanowires
by: Sheng-BoWang, et al.
Published: (2013)