Interface traps of the N-type MOS structure with Ge nanocrystals characterized by G-V measurement and Si electron-luminescence
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === In this work, Metal-Oxide-Semiconductor structure with germanium nanocrystals formed by E-gun evaporator for charge storage and luminescence is fabricated. Fabricated devices are characterized by Transmission Electron Microscope. In the characterization of memor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95863045534093738187 |