Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors
碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === We have studied the design, simulation and fabrication of AlGaAs ambient light detectors with a spectral response highly matched to Commission Internationale de l''Eclairage (CIE) photopic luminosity function. The detectors consist of an AlxGa1-xAs PIN...
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ndltd-TW-096NTU054280412016-05-11T04:16:25Z http://ndltd.ncl.edu.tw/handle/62216462341288225957 Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors 砷化鋁鎵類人眼光偵測器之設計模擬與製程 Tzu-Chiang Lin 林自強 碩士 國立臺灣大學 電子工程學研究所 96 We have studied the design, simulation and fabrication of AlGaAs ambient light detectors with a spectral response highly matched to Commission Internationale de l''Eclairage (CIE) photopic luminosity function. The detectors consist of an AlxGa1-xAs PIN junction, a two-step-four-section compositional grading structure centered in the PIN junction, and a built-in filtering structure on top of the PIN junction. The PIN junction contributes to main responsivity of the detector. The compositional grading structure, inserted into the PIN junction, is used to fill the spectral response in the long wavelength range. The filtering structure is used to filter out the short wavelength photons so as to fit the short wavelength shoulder of the CIE function. The peak responsivity of the best matching detector is 0.096 A/W at 558 nm, which corresponds to 164 pA/lux in photometric unit. The CIE defined spectral mismatch index f1’ of the detector is as low as 5.8%. Numerical simulations for the detector characteristics have also been developed, whose results are in good agreements with the experimental data. Hao-Hsiung Lin 林浩雄 2008 學位論文 ; thesis 73 en_US |
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碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === We have studied the design, simulation and fabrication of AlGaAs ambient light detectors with a spectral response highly matched to Commission Internationale de l''Eclairage (CIE) photopic luminosity function. The detectors consist of an AlxGa1-xAs PIN junction, a two-step-four-section compositional grading structure centered in the PIN junction, and a built-in filtering structure on top of the PIN junction. The PIN junction contributes to main responsivity of the detector. The compositional grading structure, inserted into the PIN junction, is used to fill the spectral response in the long wavelength range. The filtering structure is used to filter out the short wavelength photons so as to fit the short wavelength shoulder of the CIE function. The peak responsivity of the best matching detector is 0.096 A/W at 558 nm, which corresponds to 164 pA/lux in photometric unit. The CIE defined spectral mismatch index f1’ of the detector is as low as 5.8%. Numerical simulations for the detector characteristics have also been developed, whose results are in good agreements with the experimental data.
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author2 |
Hao-Hsiung Lin |
author_facet |
Hao-Hsiung Lin Tzu-Chiang Lin 林自強 |
author |
Tzu-Chiang Lin 林自強 |
spellingShingle |
Tzu-Chiang Lin 林自強 Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors |
author_sort |
Tzu-Chiang Lin |
title |
Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors |
title_short |
Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors |
title_full |
Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors |
title_fullStr |
Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors |
title_full_unstemmed |
Design, Simulation and Fabrication of AlGaAs Ambient Light Detectors |
title_sort |
design, simulation and fabrication of algaas ambient light detectors |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/62216462341288225957 |
work_keys_str_mv |
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