Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices

Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices

碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a high...

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Bibliographic Details
Main Authors:	Yi-Hsun Lin, 林義勛
Other Authors:	郭正邦
Format:	Others
Language:	zh-TW
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/62814365842848709142

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