Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices

碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a high...

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Main Authors:	Yi-Hsun Lin, 林義勛
Other Authors:	郭正邦
Format:	Others
Language:	zh-TW
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/62814365842848709142

id	ndltd-TW-096NTU05428040
record_format	oai_dc
spelling	ndltd-TW-096NTU054280402016-05-11T04:16:25Z http://ndltd.ncl.edu.tw/handle/62814365842848709142 Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices 分析淺溝槽隔離所造成機械張力對奈米部分解離絕緣體上矽金氧半之電流突增現象之影響 Yi-Hsun Lin 林義勛碩士國立臺灣大學電子工程學研究所 96 This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a higher VD for the 40nm PD device with a smaller S/D length of 0.17μm as compared to the one with the S/D length of 1.7μm due to the higher body-source bandgap narrowing effect on the parasitic bipolar device from the higher STI-induced mechanical stress, offset by the impact ionization enhanced by the bandgap narrowing in the high electric field region near the drain. 郭正邦 2008 學位論文 ; thesis 42 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立臺灣大學 === 電子工程學研究所 === 96 === This thesis reports the STI-induced mechanical stress-related kink effect behaviour of the 40nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the kink effect behaviour in the saturation region occurs at a higher VD for the 40nm PD device with a smaller S/D length of 0.17μm as compared to the one with the S/D length of 1.7μm due to the higher body-source bandgap narrowing effect on the parasitic bipolar device from the higher STI-induced mechanical stress, offset by the impact ionization enhanced by the bandgap narrowing in the high electric field region near the drain.
author2	郭正邦
author_facet	郭正邦 Yi-Hsun Lin 林義勛
author	Yi-Hsun Lin 林義勛
spellingShingle	Yi-Hsun Lin 林義勛 Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
author_sort	Yi-Hsun Lin
title	Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
title_short	Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
title_full	Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
title_fullStr	Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
title_full_unstemmed	Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices
title_sort	analysis of sti-induced mechanical stress-related kink effects for nanometer pd soi cmos devices
publishDate	2008
url	http://ndltd.ncl.edu.tw/handle/62814365842848709142
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Analysis of STI-Induced Mechanical Stress-Related Kink Effects For Nanometer PD SOI CMOS Devices

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