Enhanced optical properties of CdSe/ZnS nanoparticles by using InGaN/GaN Multiple Quantum Wells and metal films
碩士 === 國立臺灣大學 === 物理研究所 === 96 === By combining InGaN/GaN (MQWs) multiple quantum wells with different thickness of metal films, we have investigated the change of optical properties of CdSe/ZnS quantum dots. It is found that the photoluminescence intensity of CdSe/ZnS quantum dots can be enhanced b...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14177420409189009398 |
| Summary: | 碩士 === 國立臺灣大學 === 物理研究所 === 96 === By combining InGaN/GaN (MQWs) multiple quantum wells with different thickness of metal films, we have investigated the change of optical properties of CdSe/ZnS quantum dots. It is found that the photoluminescence intensity of CdSe/ZnS quantum dots can be enhanced by up to 4 times. The underlying mechanism arises from the combined effect of Förster resonance energy transfer and surface plasmon resonance. Our result is useful for the creation of highly efficient solid state emitters.
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