Transport Properties of Individual Zinc Oxide Nanowires

碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === Nanoscale devices have been widely use in applied physics and technology fields in last decade. The basic physical properties of the devices in semiconductor or solar cell are important issues as well. In this thesis, we focused on the electrical transport mecha...

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Bibliographic Details
Main Authors: Pei-Hsin Chang, 張培新
Other Authors: 何志浩
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/94311327129076593463
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Summary:碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === Nanoscale devices have been widely use in applied physics and technology fields in last decade. The basic physical properties of the devices in semiconductor or solar cell are important issues as well. In this thesis, we focused on the electrical transport mechanism at the focused ion beam (FIB) induced Pt deposition contacts on the ZnO nanowires. The FIB as-deposited Pt direct write contacts revealed low resistance Ohmic contact characteristics on the ZnO nanowires. The specific contact resistance of the as-deposited Pt contacts was around of 10-5 and 10-6 Ωcm2. The temperature-dependent current voltage characteristics revealed the specific contact resistance was decrease with the increase of temperature, indicating that the dominant transport mechanism was demonstrated to be the thermionic-field emission (TFE). When the Ga+ dose was tuned to higher, the specific contact resistance would decrease as the increasing Ga+ ion dose. The surface modification procedure indeed reduced the specific contact resistance by one order of magnitude. The lowest order of magnitude of the specific contact resistance was 2.5×10-6 Ωcm2. By temperature dependence of the specific contact resistance with the higher dose treatments, the specific contact resistance would not change with temperature change. Thus we deduced that the mechanism would transform to field effect tunneling emission (FE). These experimental results would have much help in fabrication of nanoscale application devices with FIB Pt deposition contacts.