The Effect of Interfacial Treatment to Work Function of the Metal Gate and the Implantation of Ytterbium to the Lightly Doped Drain Area

• Main Authors: Jyun-Hong Chen, 陳俊宏
• Other Authors: 吳志毅
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/75958962455070113760

碩士 === 臺灣大學 === 光電工程學研究所 === 96 === With CMOS is scaling down, using metal gate will make devices perform better. Traditional poly-gate is restricted by material characteristic - gate depletion effect. The effect will decrease the gate capacitance, and increase the operation voltage. The depletion width will broaden about 3-5 angstrom, which is not accepted by the advanced semiconductor technology. So we expect to find some simple ways to tune metal work function in order to replace poly-silicon gate with metal gate. Second part, we want to discuss the influence of the implanted ytterbium to the lightly doped drain region and the sheet resistance of the samples after they are annealed at different temperature and time. We expect to decrease the sheet resistance of LDD area and to enhance the speed of device.