Operation Characteristic of Charge-Trapping-type Flash Memory Device with Charge-trapping layer of stacked dielectrics

Operation Characteristic of Charge-Trapping-type Flash Memory Device with Charge-trapping layer of stacked dielectrics

碩士 === 國立清華大學 === 工程與系統科學系 === 96 ===

Bibliographic Details
Main Authors:	Te-Chiang Liu, 劉得強
Other Authors:	Kuei-Shu Chang-Liao
Format:	Others
Language:	zh-TW
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/48553041687300820363

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