Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field

• Main Authors: Wei Hsin Lin, 林瑋歆
• Other Authors: Ikai Lo
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/c642g6

碩士 === 國立中山大學 === 物理學系研究所 === 96 === We have fabricated the device of High Electron Mobility Transistor(HEMT) on Al0.18Ga0.82N/GaN heterostructures. The mobility of 2DEG of the AlGaN/GaN is 9328 cm2/Vs and carrier concentration is 7.917 1012 cm-2 obtained by conventional van der pauw Hall measurement at temperature of 77 K. We made the conducting channel of nanometer wires on the AlGaN/GaN heterostructures for researching low-dimensional transport of two-Dimensional Electron Gas by gate controlled. From the SdH measurement, we can clearly observe the SdH oscillations and obtain the SdH frequencies. For the sample of 0922GaN-200 nm and 0922GaN-100 nm at 0.39 K,two constituted peaks of Gauss’s function were fitted by Non-linear Curve and Two SdH oscillations beat each other, probably due to spin-splitting. However, we can’t discover any trend in the experiment of gate controlled. In the future, we will try to improve the quality and discover the suitable depth of SiO2.