Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam
碩士 === 國立中山大學 === 物理學系研究所 === 96 === We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is 9300 cm2/Vs and carrier concentration is 7.9×1012 cm-2 by conventional van der Pauw Ha...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3wudgr |