| Summary: | 碩士 === 國立中山大學 === 光電工程研究所 === 96 === The band-gap engineering is an important technique for integration of optoelectronic devices. Using the inter-diffusion of atoms in the quantum well structure, Quantum-Well Intermixing (QWI) technique has been widely used for band-gap engineering due to its simple process and capability of local tuning in chip. Electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are two essential devices in optoelectronic field. The band-gap engineering is needed to get optimized performance in integration of EAM and SOA because of the energy level offset in both material structures. In this work, an simple QWI technique, called impurity free vacancy diffusion (IFVD), is employed to integrate EAM and SOA. In the device design, a chain structure of EAM-integrated SOA is used for high-speed and low-noise performance. No re-growth step is needed in the whole device process. An good property EAM with blue shift of 20nm from SOA portion is achieved from this IFVD method.
|
|---|
