| Summary: | 碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 96 === In recent years, due to the emerging development of the wireless communication system, integrating many kinds of communication standards has become the newest trend. To meet the foregoing requirement, the multi-band receiver has been thus developed. Here, the design of the multi-band low-noise amplifier will become the key point of the RF front-end receiver. Based on the above background, this Thesis mainly focuses on the design of a multi-band low-noise amplifier (LNA). Its target frequency band is settled at 5.2 GHz, 2.4 GHz and 1.8 GHz. The designed LNA mainly employs the inductive degeneration technique and the transistor cascode circuit, in which the impedance matching circuit adopts a parallel LC resonance structure. Therefore, the power consumption of LNA is reduced significantly. In addition, for the simulation under the standard cells, both S11 and S22 for our proposed dual-band LNA can be -10 dB below. S21 is about 9.4 dB at 2.4GHz and about 12.3 dB at 5.2GH. NF is about 3.7dB at both 5.2GHz and 2.4GHz. Parameter P1dB is about -11 dBm ~ -14 dBm. IIP3 is about -1 dBm ~ -3 dBm. Its power consumption is about 7mW. Another design, the triple-band LNA (1.8 GHz, 2.4 GHz, 5.2 GHz), under ideal components is also presented. The performance is as follows: Both S11 and S22 can down to -10 dB below. S21 is about 15 dB ~17 dB. NF is about 1.1~1.8 dB. P1dB is about -12 dBm ~ -20 dBm. IIP3 is about -8 dBm ~ 1.5 dBm.
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