Investigation of InGaP/InGaAs/GaAs Double Channel Pseudomorphic High Electron Mobility Transistors (DCPHEMTs)
碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 96 === In this thesis, the device characteristics of InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with triple delta-doped sheets are systematically investigated. The triple delta-doped sheets densities and Schottky barri...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12622329745360255337 |