Investigation of InGaP/InGaAs/GaAs Double Channel Pseudomorphic High Electron Mobility Transistors (DCPHEMTs)

• Main Authors: Lu-An Chen, 陳履安
• Other Authors: Shiou-Ying Cheng
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/12622329745360255337

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 96 === In this thesis, the device characteristics of InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with triple delta-doped sheets are systematically investigated. The triple delta-doped sheets densities and Schottky barrier layer thickness are important factors to affect device performance. Based on a two-dimensional simulator of Atlas, we report on detailed calculations and studies including energy band diagrams, distribution of carrier, DC and microwave performance. Due to the employed InGaAs DC structure and Schottky and buffer behaviors of InGaP “insulator”, good pinch-off and saturation characteristics, high current drivability, large transconductance and excellent microwave performance are obtained. For comparison, a practical DCPHEMT with good device performance is fabricated successfully. Generally, good agreements between experimental results and theoretical simulations are found. Therefore, it is concluded that the DCPHEMT with appropriate triple delta-doped sheets densities offers the promise for microwave device applications.