| Summary: | 碩士 === 國立東華大學 === 應用物理研究所 === 96 === Using atomic force microscope (AFM) anodic nano-oxide bumps were locally tip-induced on a native SiO2 layer of Si(111) in contact mode. To study the anodic growth mechanism and the ratios of O and Si, wavelength dispersion spectroscopy (WDS) and scanning photoelectron spectromicroscopy (SPEM) were exploited.
From the semi-quantitative WDS spectra, the nano-oxide bump contains more oxygen than the native SiO2 layer, indicating that the ratio of O and Si of the nano-oxide bump is greater than 2. From the quantitative SPEM spectra, the components of Si4+O4, Si3+O3, Si2+O2, and Si can be separated. From the intensity ratios of Si4+O4, Si3+O3, Si2+O2, and Si, we can easily and exactly obtain the ratio of O and Si of the nano-oxide bump. The higher nano-oxide bumps get the larger ratios of O and Si.
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