Analysis of O/Si ratio on the silicon oxide by scanning photoelectron spectromicroscopy
碩士 === 國立東華大學 === 應用物理研究所 === 96 === Using atomic force microscope (AFM) anodic nano-oxide bumps were locally tip-induced on a native SiO2 layer of Si(111) in contact mode. To study the anodic growth mechanism and the ratios of O and Si, wavelength dispersion spectroscopy (WDS) and scanning photoele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94675562557203025042 |