Preparation of ZnO film on MgAl2O4(111) by metal-organic chemical vapor deposition

• Main Authors: Huan-Yu Lai, 賴煥友
• Other Authors: Yi-Chia Chen
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/s795jg

碩士 === 國立東華大學 === 材料科學與工程學系 === 96 === In this research, we studied the ZnO film deposited on MgAl2O4 (111) by metal-organic chemical vapor deposition. The chemical etching of MgAl2O4 was performed using H2SO4 and H3PO4 respectively to control the exposure of different surfaces of (111) MgAl2O4. At the growth temperature of about 300, ℃the property of the specimen by H3PO4 etching is similar to that by H2SO4 etching. At the growth temperature of 350℃, the specimen by H3PO4 etching has better quality than specimen by H2SO4 etching determined by SEM、XRD and PL analysis. The specimen by H3PO4 etching tends to suppress the growth 30° rotation domain of ZnO than the specimen by H2SO4 etching. From the study of influence of change of oxygen flow on the deposition of ZnO thin film by SEM、XRD and PL analysis, we found grain sizes decrease with reduced oxygen flow. The result is different from several studies from other researchers. We thought that the decrease of grain sizes is due to the decrease of nucleation rate as oxygen flow decreases. We proved that appropriate oxygen flows improve the quality of ZnO film.