Preparation and Characterization of Zinc and Arsenic codoped Indium Nitride Thin Film by Radio Frequency Sputtering
碩士 === 國立東華大學 === 材料科學與工程學系 === 96 === Indium nitride (InN) has the narrowest band gap of ~ 0.6 eV among the isostructural Ⅲ-Ⅴ nitride compounds. Because of this energy and its direct band gap, it has a potential application for visable-light optoelectronic devices and for high-efficiency solar cell...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ttpuc5 |