Preparation and Characterization of Zinc and Arsenic codoped Indium Nitride Thin Film by Radio Frequency Sputtering

• Main Authors: Chun-Hung Shih, 施俊宏
• Other Authors: Dong-Hau Kuo
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/ttpuc5

碩士 === 國立東華大學 === 材料科學與工程學系 === 96 === Indium nitride (InN) has the narrowest band gap of ~ 0.6 eV among the isostructural Ⅲ-Ⅴ nitride compounds. Because of this energy and its direct band gap, it has a potential application for visable-light optoelectronic devices and for high-efficiency solar cell. P-type doping of InN is one of most important topics in InN research and a necessary step toward fabrication of In1-xGaxN alloys for high-efficiency multi-junction or tandem solar cells. This research used undoped, Zn doped, Zn and As codoped In targets in nitrogen gas to prepare InN films on sapphire by radio frequency sputtering. We changed the substrate temperature, working pressure, annealing temperature and doping to observe microstructure、optical and electrical properties of InN thin films. According to XRD, all samples examined by X-ray were polycrystal thin films. Hall measurement found that InN was still n-type conductivity films. We guess that defects in undoped InN may result from In interstitial, NIn antisite and nitrogen interstitial native point defects, as examined by XPS, Raman and EDS analysis. From the results of absorption edge, we observed all samples had band gap about 2eV. When Zn and As were codoped in InN, lattice constant and carrier concentration were reduced, crystallinity degraded, and conduction was in p-type behavior. However, Zn-doped InN not only can’t decrease the carrier concentration but also made lattice became amorphous.