The Preparation and Characterizations of Buffer Layers for Cu(In,Ga)Se2 Solar Cells

• Main Authors: Yueh-Lin Jan, 詹岳霖
• Other Authors: Chia-Hua Huang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/ux548h

碩士 === 國立東華大學 === 光電工程研究所 === 96 === The buffer layers of cadmium sulfide (CdS), zinc oxide (ZnO), zinc sulfide (ZnS), and indium sulfide (In2S3) thin films were deposited by chemical-bath-deposition (CBD) process for the Cu(In,Ga)Se2 solar cells. The thickness of deposited films was determined by profiler and atomic force microscopy. The surface morphology, crystal structure, and composition of buffer layers, optical properties were characterized by field-emission scanning electron microscopy (SEM), X-ray diffraction, energy dispersive spectrometer, and ultraviolet-visible spectrometer, respectively. From SEM results, the conformal coverage of CdS, ZnS, ZnO, or In2S3 films on the substrates were achieved. The transmittance of these buffer layers are greater then 80%. After annealing at 100, 200, or 300C, the transmittance of CdS, ZnO, and ZnS thin films was improved. The characteristics of CdS, ZnO, ZnS, and In2S3 thin films deposited CBD process were investigated. With the desired properties, these thin films shall be employed for the buffer layers of CIGS solar cells.