Investigation of Different Buffer Layer Conditions on GaN Epilayer Characteristics
碩士 === 國立彰化師範大學 === 光電科技研究所 === 96 === It has been well known that the high mismatch in lattice constant andthemal expansion coefficients between Si and GaN causes cracks andhigh density of dislocations when GaN is grown on Si substrate. Thesedefects deteriorate GaN film characteristics. In this the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33093444982945114821 |