Investigation of optical characteristics of InGaAsN vertical-cavity surface-emitting laser

• Main Authors: Chien-Fang Chiu, 邱千芳
• Other Authors: Yen-Kuang Kuo
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/64041997965003039867

碩士 === 國立彰化師範大學 === 光電科技研究所 === 96 === The InGaAsN material has been intensively studied in the past few years due to its specific property and potential application in 1.3-µm lasers for optical fiber communication. The InGaAsN lighting device, which possesses large conduction band offset ratio, has some advantages, e.g. high characteristic temperature and low-cost GaAs substrate. Therefore, it is a great candidate for optical communication applications. In chapter 1, firstly, the material gains of InGaAsN, InGaAlAs and InGaAsP materials are analyzed. Then, the physical properties of InGaAsN are briefly introduced. In chapter 2, the geometric difference between the Vertical-Cavity Surface-Emitting Laser (VCSEL) and the Edge-Emitting Laser (EEL) is introduced. Then, introduction to the design principle of distributed Bragg reflector (DBR) is provided. Furthermore, the dielectric and semiconductor DBRs are introduced and four basic VCSEL structures are presented. In chapter 3, I firstly show the material parameters of InGaAsN, InGaAlAs and InGaAsP. Secondly, the gain spectra and transparent carrier densities of InGaAsN, InGaAlAs and InGaAsP at 1.3 µm are simulated with the PICS3D simulation program. Thirdly, the transparent carrier densities and optical gain spectra of the compressively strained InGaAsN quantum wells with GaAs barriers are investigated. Finally, the optimized design of InGaAsN with compressive strain is proposed and the physical origins are provided. In chapter 4, the optical properties of the 1.3-µm InGaAsN VCSEL with different nitrogen concentrations in quantum wells are compared and studied. According to the simulation results, the appropriate design of nitrogen concentration is demonstrated. In chapter 5, a brief summary to the previous discussion is provided.