| Summary: | 碩士 === 國立彰化師範大學 === 光電科技研究所 === 96 === In this study, Zinc Oxide (ZnO) thin films with/without Mg doping were deposited on substrates by the Sol-gel method. By employing the x-ray photoelectron spectroscopy, x-ray diffraction, current-voltage measurment, and photoluminescence, it is worthwhile to investigate the optical and electrical properties of Zn1-xMgxO (x = 0, 0.027, 0.042, and 0.060) ternary alloy thin films. It is worth noting that the band-edge luminescence (BEL) of Zn0.973Mg0.027O film at room temperature was nearly 6 times than the ZnO film. The intensity of the BEL seems to increase up to 126 folds for Zn0.94Mg0.06O and 24 folds for Zn0.958Mg0.042O, compared with the ZnO film. The enhanced BEL intensity by Mg doping has been attributed to the suppression of capacitance variation relating to trapping/detrapping of charges, a decrease in the number of oxygen vacancy and nonradiative recombination defects, an increase in the nonradiative recombination lifetime, and a reduction in the refractive index of the Zn1-xMgxO.
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