Study of Nucleation, Mergence, Growth of Gas Film by Hydrogen Plasma to Split Nano-Scale Layer from Substrate

• Main Authors: Ping-Jung Wu, 巫秉融
• Other Authors: Tien-His Lee
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/63410376668940048747

碩士 === 國立中央大學 === 機械工程研究所 === 96 === This research investigates the feasibility of the hydrogen plasma immersion ion implantation system (PIII) replacing the conventional ion implantation step in Smart-cut process. PIII system offers several advantages such as large implanted area, high throughput, and low cost as compared with conventional ion implantation. The hydrogen ion implantation in Smart-cut process selects specific hydrogen ions by extraction system and then accelerates it to implant into the specific depth at certain implant energy for layer splitting. Although there is no extraction implement in hydrogen PIII system for low cost, a large distribution area is formed by three ions with same implanted energy but different charge/mass, H+, H2+, and H3+. The surface roughness of transferred layer increases due to unapparent layer splitting position. A special heterostructure substrate was designed and combined with low cost hydrogen PIII without extraction system to solve this problem. Moreover, the insertion of an extra element let us decrease the annealing temperature for layer splitting to 250°C in contrast to the temperature used in Smart-cut process, 450°C. In other words, this research achievement can define the thickness of transferred layer and reduce the annealing temperature as a result of the special inserted heterostructure. This research supplies an innovative technique different from conventional Smart-cut process for the top layer of silicon on insulator fabrication less than 100nm thickness.