| Summary: | 碩士 === 國立交通大學 === 顯示科技研究所 === 96 === Various organic-semiconductor-based ambipolar transistors operated both in positive and negative gate voltage are recently key components in the field of organic complementary-like circuit development. Besides, it will be more potential by adopting solution-processed method or inject-printing methods. In the thesis, two famous organic conducting materials rr-P3HT and PCBM were introduced in developing photosensitive ambipolar field-effect transistors. Herein, we successfully make inverter circuit and let the characteristics discussed in this article. Besides, the variation of hole and electron mobilities are observed and got statistics according to different composite films of P3HT / PCBM ratio. Furthermore, we experimentally introduce different metal electrodes and ultra thin metal oxide layer for comparison to study the performances . In the thesis, another investigation is to fabricate phototransistor with variable characteristics under illumination and these characteristics may be the basis for developing phototransistor and the design of sensor circuit. To decrease the higher threshold voltage both in p-channel and n-channel, bi-layer structure and PTCDI-C8 were introduced to arrive the aim. After studying the characteristics of phototransistor based on the different composite films, we try to explain the mechanism of photoconductivity and photovoltaic effect under illumination. Finally, the semiconductor materials are analysed by AFM, XRD, XPS and UV-visible.
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