| Summary: | 碩士 === 國立交通大學 === 奈米科技研究所 === 96 === This research combines "the physical model of semiconductor device design with" biotechnology" for "Biosensor". In this research, the hardware components that we use are" silicon nanaowire field effect transistor (SiNW FET)" and" Schottky Barrier Nano-Wires (SBNW)", and the detection target molecules are AEAPTMS-Gold nanoparticles. These two different semiconductor device structures are analysed by TCAD.
Based on the physical model and numerical solution of these two device structures, and TCAD was set up for an equivalent model for calculation of the limit of sensitivity in molecule detecting. Also, we have justified that SBNW device is more sensitive under reverse-bias condition than that of SiNW FET in molecule-detecting. In the future, this research will provide an effective model and correct references for the research in the field of bio-medicine detection.
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