The Enhancement of the Sensitivity for SiGe Nanowire Bio-sensor by Oxidation

• Main Authors: Wen-Chuan Chao, 趙文全
• Other Authors: Tahui Wang
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/325pg2

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === Si nanowires (SiNWs) have been studied for Bio-sensor in recent years. However, as far as sensitivity is concerned, SiGe nanowires are more promising than Si nanowires because of SiGe nanowires have higher change in drive current when the same chemical species bonding to surface of nanowire. In addition, we have reported the sensitivity increase with Ge concentration (7%~30%). But it is difficult to fabricate higher Ge concentration nanowire. Therefore, we utilize oxidation process to enhance Ge concentration in SiGe nanowire because Ge is rejected from the oxide during oxidation process. We found that the sensitivity of lower Ge concentration (7%~20%) nanowires were enhanced by oxidation process after the oxidation of 2min at 900°C. After the oxidation of 2min at 950°C, we observed that the sensitivity of Si0.93Ge0.07 nanowires were improved but the sensitivity of Si0.89Ge0.11 nanowires not increased. The reason maybe higher defect was formed during this oxidation process.