A study of proximity effect in E-beam lithography

• Main Authors: Chen-Hsiang Fang, 方禎祥
• Other Authors: Yang-Tung Huang
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/66606222665172220132

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === In this thesis, proximity effect of E-beam lithography was investigated, including proximity effect parameters and proximity effect correction. An E-beam simulation program based on Monte Carlo method was developed to obtain proximity effect parameters. Besides, the proximity parameters were extracted from experiment data of our designed patterns with the double Gaussian functions model. With these proximity effect parameters and our designed patterns, corrected E-beam exposure files were generated by the proximity correction software, PROXECCO. Using the corrected files, proximity effect was demonstrated to be corrected significantly from the experiment results. Sub 100 nm patterns were printed successfully by using the proximity effect correction method at variable shape E-beam exposure tool, Leica WePrint 200.