| Summary: | 碩士 === 國立交通大學 === 理學院IC製程化學產業專班 === 96 === “Diode” has so far been widely applied in the Very-large-scale integration (VLSI). What is more, the theorem and characteristics of its device also lay a solid foundation for the device of semiconductor. Nowadays, the feature size of semiconductor has been downsized into a nano-scale which makes the existing theories insufficient to explain both its effect and property. However, if well utilized, its novel property will lead into a brand-new application level.
The Solar cell made of silicon substrate has currently been in an extensive application; nevertheless, its conversion efficiency is far disappointing when compared to solar cell made of heterojunction GaAs. The major explanation lays on the fact that the property of Si belongs to material of Non-direct energy band. This special property helps Si absorb more wavelength than GaAs; however, it also causes comparatively stronger Saturation Current in which the leakage effects are increased and the whole conversion efficiency is decreased accordingly. Hence, the research focus of this dissertation is aiming at proposing a method which hopefully will improve the property of saturation current of si-based.
Through E-Beam Lithography, this experiment is intended to build a device of PN Junction diode made of Si material in a nano scale. Besides, the experiment also probes into whether the saturation current of Silicon substrate can be alleviated effectively out of its special structure and, what is more, in comparison with those traditional PN Junction diodes by observing two different PN Junction diodes to understand if their electrical characteristics will be different.
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