Design of Dual-Band LNAs for Wireless Area Networks

碩士 === 國立交通大學 === 電機學院碩士在職專班電機與控制組 === 96 === This thesis studies design of dual-band low-noise amplifiers (LNA) for use in the IEEE802.11a and 802.11b wireless local area networks (WLANs). This cascaded two-stage dual-band LNA is designed at 2.441 GHz and 5.772 GHz, with high gains and optimized no...

Full description

Bibliographic Details
Main Authors: Chia-Hsin Lin, 林嘉星
Other Authors: Yon-Ping Chen
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/93897424156310367539
id ndltd-TW-096NCTU5591069
record_format oai_dc
spelling ndltd-TW-096NCTU55910692016-05-18T04:13:16Z http://ndltd.ncl.edu.tw/handle/93897424156310367539 Design of Dual-Band LNAs for Wireless Area Networks 無線區域網路雙頻低雜訊放大器設計 Chia-Hsin Lin 林嘉星 碩士 國立交通大學 電機學院碩士在職專班電機與控制組 96 This thesis studies design of dual-band low-noise amplifiers (LNA) for use in the IEEE802.11a and 802.11b wireless local area networks (WLANs). This cascaded two-stage dual-band LNA is designed at 2.441 GHz and 5.772 GHz, with high gains and optimized noise figures. The circuit design uses compensated matching networks, microstrip transmission lines, and resonance matching networks. The lumped inductors and capacitors use those manufactured by the TDK company. The resonance matching network is implemented using microstrip lines. This dual-band LNA uses DC 3.3 V and consumes 42 mA. The circuit achieves 27.7 dB power gain and 1.4 dB NF at 2.441 GHz, and 15 dB power gain and 2.3 dB NF at 5.772 GHz. Yon-Ping Chen Jen-Tsai Kuo 陳永平 郭仁財 2007 學位論文 ; thesis 48 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 電機學院碩士在職專班電機與控制組 === 96 === This thesis studies design of dual-band low-noise amplifiers (LNA) for use in the IEEE802.11a and 802.11b wireless local area networks (WLANs). This cascaded two-stage dual-band LNA is designed at 2.441 GHz and 5.772 GHz, with high gains and optimized noise figures. The circuit design uses compensated matching networks, microstrip transmission lines, and resonance matching networks. The lumped inductors and capacitors use those manufactured by the TDK company. The resonance matching network is implemented using microstrip lines. This dual-band LNA uses DC 3.3 V and consumes 42 mA. The circuit achieves 27.7 dB power gain and 1.4 dB NF at 2.441 GHz, and 15 dB power gain and 2.3 dB NF at 5.772 GHz.
author2 Yon-Ping Chen
author_facet Yon-Ping Chen
Chia-Hsin Lin
林嘉星
author Chia-Hsin Lin
林嘉星
spellingShingle Chia-Hsin Lin
林嘉星
Design of Dual-Band LNAs for Wireless Area Networks
author_sort Chia-Hsin Lin
title Design of Dual-Band LNAs for Wireless Area Networks
title_short Design of Dual-Band LNAs for Wireless Area Networks
title_full Design of Dual-Band LNAs for Wireless Area Networks
title_fullStr Design of Dual-Band LNAs for Wireless Area Networks
title_full_unstemmed Design of Dual-Band LNAs for Wireless Area Networks
title_sort design of dual-band lnas for wireless area networks
publishDate 2007
url http://ndltd.ncl.edu.tw/handle/93897424156310367539
work_keys_str_mv AT chiahsinlin designofdualbandlnasforwirelessareanetworks
AT línjiāxīng designofdualbandlnasforwirelessareanetworks
AT chiahsinlin wúxiànqūyùwǎnglùshuāngpíndīzáxùnfàngdàqìshèjì
AT línjiāxīng wúxiànqūyùwǎnglùshuāngpíndīzáxùnfàngdàqìshèjì
_version_ 1718270898992054272