A Low Voltage And Low Power Thermal Infrared Ray Temperature Sensing Device

• Main Authors: Chien-Hsien Lin, 林建賢
• Other Authors: Jin-Chern Chiou
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/98281920306280250526

碩士 === 國立交通大學 === 電機與控制工程系所 === 96 === A low voltage and low power thermal infrared ray temperature sensing device is developed in this study. The device consists of infrared ray temperature sensor, analog front-end amplifier circuit and alternative reference voltage ADC. The infrared ray temperature sensor is obtained by using thermopile structure. The maximum output voltage of the infrared ray temperature sensor is from 5 to 10uV and distributed in the low-frequency band (10~100Hz). With low frequency and low output voltage of the sensor, a low noise and low offset voltage front-end amplifier circuit called chopper amplifier is used to amplify the signal of sensor. Upon the completion of the amplifier, an 8-bits alternative reference voltage ADC is used to convert analog input to digital output. The circuit of chip was simulated by using TSMC 0.18μm COMS Mixed-Signal RF General purpose MiM Al 1P6M 1.8 & 3.3V process. The measurement results have shown that the chopper amplifier has achieved 2 input noise 、5mV offset voltage and 22dB gain at 1.67KHz chopping. The ADC has an 5.98 effective number of bits (ENOB) at 100Hz input sine wave. The sensor signal is 100mV output per 10℃ changed after amplifying at 80dB. The supply voltage and total power consumption of the fabricated device are 1V and 1.31mW respectively.