Model Analysis and Run to Run Optimal Control of Plasma Enhance Chemical Vapor Deposition Process

• Main Authors: Wei-Ting Yu, 余偉庭
• Other Authors: Stone Cheng
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/56826821845867675314

碩士 === 國立交通大學 === 機械工程系所 === 96 === In this thesis, we discuss with the property of PECVD equipment deposit TEOS Oxide film in different process conditions. First, we choose two input parameters (chamber pressure and the gas flow rate of O2) and two output variables(deposition thickness and ununiformity) to establish the model of PECVD system. Substituting different data into the input parameters, and using the DOE method to find the relationship between the two input parameters and the two output variables. We establish two PECVD system models respectively controlled by the EWMA controller and the RLS controller proceeding with simulation and experiment. We expect that the output variables can reach our target value that wafer deposition thickness error can be within 5% and ununiformity can be under 1.5%. As the controllers ideally control with the deposition thickness and ununiformity would improve the quality of PECVD process.