Model Analysis and Run to Run Optimal Control of Plasma Enhance Chemical Vapor Deposition Process
碩士 === 國立交通大學 === 機械工程系所 === 96 === In this thesis, we discuss with the property of PECVD equipment deposit TEOS Oxide film in different process conditions. First, we choose two input parameters (chamber pressure and the gas flow rate of O2) and two output variables(deposition thickness and ununifor...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56826821845867675314 |