Comparing Quality Cost of Different Monitoring Methods in Silicon Wafer Manufacturing Process

• Main Author: 徐方元
• Other Authors: 姜齊
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/10067024391063424385

碩士 === 國立交通大學 === 管理學院碩士在職專班管理科學組 === 96 === Integrated circuit virtually created the foundation for the entire field of modern microelectronics. Silicon wafer is one of the most important raw materials for IC. Silicon wafer manufacturing is a mature industry and there are around 10 vendors in the world. Each vendor’s wafer has similar quality level for IC Fab and there is almost no barrier for vendor replacement. Under the globalize competition and in the trend of micro profit, cost reduction is a key factor for silicon wafer suppliers. In silicon wafer manufacturing process, the surface metallic contamination analysis is a destructive inspection. Therefore, 100% inspection is impossible and statistical process control is a suitable tool for process monitoring. By comparing the different items of quality costs among three kinds of SPC monitoring method, this study establishes formulas for quality cost difference. It is also discussed which methods has the lowest quality cost while the abnormality frequency changed. Finally, this study practically applies related data from T Company to those formulas. The result can be a reference for silicon wafer manufacturing industry to select method with lowest quality cost.