Epitaxial Lateral Overgrowth of GaN Thick Films on Porous Mask Fabricated by Ni Film Dewetting Phenomenon
碩士 === 國立交通大學 === 電子物理系所 === 96 === In this work, we propose a new process to fabricate porous SiO2 as epitaxial lateral overgrowth (ELOG) mask. Nanometer or micrometer scale porous Ni film formed by the dewetting of two-dimensional Ni film on SiO2 during rapid thermal annealing was investigated. Th...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53135620724993465524 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 96 === In this work, we propose a new process to fabricate porous SiO2 as epitaxial lateral overgrowth (ELOG) mask. Nanometer or micrometer scale porous Ni film formed by the dewetting of two-dimensional Ni film on SiO2 during rapid thermal annealing was investigated. The hole size varied by different annealing conditions and the thickness of the Ni film. Then porous SiO2 was fabricated by using dewetted Ni film as an etching mask. GaN with a thickness of 150~200μm was grown by hydride vapor phase epitaxy (HVPE). The strain released near the interface of the GaN thick film and the sapphire substrate by this structure was investigated by cross-sectional micro-Raman analysis. The residue strain near the interface of the sample grown on the porous SiO2 template was less than that of which grown on the stripe patterned one. The dislocation density of 4.4x107/cm2 was estimated by the etching pit density.
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