Fabrication of free-standing GaN substrate using laser lif-off technique

碩士 === 國立交通大學 === 電子物理系所 === 96 === In this work we fabricated free-standing GaN thick film using laser lift-off technique,and we obtained some important results from this work ; first,we successfully fabricated 1.5 inch free-standing GaN thick film,which are complete and without obvious crack,the p...

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Bibliographic Details
Main Authors: Hung-wei Yu, 尤宏瑋
Other Authors: Wei-I Lee
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/t29dk2