Fabrication and physical properties of transparent conducting ZnO-SnO2 films
碩士 === 國立交通大學 === 電子物理系所 === 96 === In this thesis, the electrical and optical properties of ZnO-SnO2 transparent conducting thin films fabricated on Al2O3 (0001) by reactive DC magnetron sputtering were studied by modulating the Zn/Sn ratio. The phase of these samples was preliminary deduced to be...
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| Format: | Others |
| Language: | zh-TW |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2k27xq |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 96 === In this thesis, the electrical and optical properties of ZnO-SnO2 transparent conducting thin films fabricated on Al2O3 (0001) by reactive DC magnetron sputtering were studied by modulating the Zn/Sn ratio. The phase of these samples was preliminary deduced to be Zn doped SnO2 by the structural and compositional analyses. At the minimum Zn doping (2 at.%), an optimal condition of the minimum resistivity of 3.73×10-2 Ω-cm with the maximum carrier concentration of 1.26×1019 cm-3 and the maximum mobility of 13.3 cm2V-1s-1 was obtained. When the doping concentration of Zn was increased to 33 at.%, the resistivity increased to 4.03×10-1 Ω-cm and the carrier concentration decreased to 3.24×1018 cm-3. On the other hand, the electrical properties of films were enormously improved by annealing at 300oc with 10-5 torr vaccum. An average transmittance above 90% in the visible range was obtained. The absorption specta also showed that the optical band gap of the materials became larger as the Zn content increased. The low temperature photoluminescence showed that the films were radiative in the visible range.
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