Analysis of Source/Drain Resistance of Modified Schottky Barrier (MSB) FETs
碩士 === 國立交通大學 === 電子工程系所 === 96 === As CMOS device scaling to nanometer regime, the conventional device would meet many challenges to scaling. The Schottky barrier (SB) FET becomes one of the promising structures and has better scalability. However, the on-current of SB FETs is limited by the Schott...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37749911446097760337 |