The study on the silicon dioxide deposited by Atmospheric-Pressure Plasma Technology for Organic Thin-Film Transistor application
碩士 === 國立交通大學 === 電子工程系所 === 96 === We have successfully fabricated pentacene-based organic thin film transistor at a low temperature process with silicon oxide as a gate dielectric deposited by atmospheric-pressure plasma technology (APPT). The advantage of the atmospheric-pressure plasma technolog...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56314580731999176885 |