| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 96 === We have successfully fabricated pentacene-based organic thin film transistor at a low temperature process with silicon oxide as a gate dielectric deposited by atmospheric-pressure plasma technology (APPT). The advantage of the atmospheric-pressure plasma technology is that it needn't vacuum and at general room temperature to deposit insulator. This merit happen to suits the organic thin film transistor the low temperature system regulation condition. In this article we will study the characteristic of gate silicon oxide which is deposited by atmospheric-pressure plasma technology on the organic thin film transistor. We make use of metal - insulator - metal structure to probe into leakage current of the gate silicon oxide deposited by APPT, and we obtain the lower leakage current of gate dielectric after plasma treatment. In the research, the organic thin film transistor can operate at the voltage less than - 3 volts, and the low operation voltage and low leakage current properties are required in portable applications. In this article we can observe the OTFT characteristic on silicon oxide deposited by APPT. The field-effect transistor has a threshold voltage less than -1V, the mobility of 0.5-0.8 cm2/Vs and on/off ratio about 103.
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